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NTGD3148N Power MOSFET
20 V, 3.5 A, Dual N-Channel, TSOP-6
Features
* * * * *
Low Threshold Levels, VGS(th) < 1.5 V Low Gate Charge (3.8 nC) Leading Edge Trench Technology of Low RDS(on) High Power and Current Handling Capability This is a Pb-Free Device
http://onsemi.com N-CHANNEL MOSFET
V(BR)DSS 20 V 100 mW @ 2.5 V RDS(on) Max 70 mW @ 4.5 V 3.5 A ID Max
Applications
* DC-DC Converters (Buck and Boost Circuits) * Low Side Load Switch * Optimized for Battery and Load Management Applications in *
Portable Equipment Like Cell Phones, DSCs, Media Player, Etc Battery Charging and Protection Circuits
G Value 20 12 3.0 2.2 ID PD 3.5 0.9 1.1 tp = 10 ms IDM TJ, TSTG IS TL 10 -50 to 150 0.8 260 A C A C A 1 Power Dissipation (Note 1) Steady State t5 s TA = 25C W TSOP-6 CASE 318G STYLE 13 Unit V V A
D
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Continuous Drain Current (Note 1) Steady State TA = 25C TA = 85C t5 s TA = 25C Symbol VDSS VGS ID
S N-CHANNEL MOSFET
MARKING DIAGRAM
DN MG G 1
Pulsed Drain Current
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
DN = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 5 s (Note 1) Symbol RqJA RqJA Value 140 110 Unit C/W C/W D2 S1 D1 4 5 6
PIN CONNECTION
3 G2 2 S2 1 G1
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2008
1
April, 2008 - Rev. 0
Publication Order Number: NTGD3148N/D
NTGD3148N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = 4.5 V VGS = 2.5 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-TO-SOURCE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 0.8 A VGS = 0 V ID = 0.8 A TJ = 25C TJ = 125C 0.71 0.57 9.0 5.0 4.0 2.5 nC ns V td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 10 V, ID = 3.5 A, RG = 3.0 W 7.4 11.2 12.8 1.6 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 10 V, ID = 3.5 A 300 VGS = 0 V, f = 1.0 MHz, VDS = 10 V 73 44 3.8 0.3 0.7 1.1 2.8 W nC pF ID = 3.5 A ID = 2.8 A VGS = VDS, ID = 250 mA 0.5 3.28 41.7 58 6.2 70 100 1.5 V mV/C mW S V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, ID = 250 mA ID = 250 mA, Ref to 25C VGS = 0 V, VDS = 16 V TJ = 25C TJ = 125C 20 12.5 1.0 10 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit
VDS = 0 V, VGS = 12 V
VDS = 5.0 V, ID = 3.5 A
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device NTGD3148NT1G Package TSOP-6 (Pb-Free) Shipping 3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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NTGD3148N
5 6 ID, DRAIN CURRENT (A) 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1.6 V 2.4 V - 3.0 V 2.2 V 4.5 V 1.8 V VGS = 2.0 V ID, DRAIN CURRENT (A) 4 VDS 10 V
3
TJ = 125C
2 TJ = 25C 1 TJ = -55C 0 0 0.5 1 1.5 2 2.5 VGS, GATE-TO-SOURCE VOLTAGE (V)
1.4 V
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.08 0.07 0.06 0.05
Figure 2. Transfer Characteristics
0.38 0.34 0.3 0.26 0.22 0.18 0.14 0.1 0.06 0.02 1 2 3 4 VGS, GATE VOLTAGE (V)
ID = 3.5 A TJ = 25C
TJ = 25C VGS = 2.5 V
VGS = 4.5 V 0.04 0.03 0.02 0.01 0 2 3 4 5 ID, DRAIN CURRENT (A) 6 7
5
6
Figure 3. On-Resistance vs. Voltage
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) ID = 3.5 A VGS = 4.5 V
10000
TJ = 125C IDSS, LEAKAGE (nA) 1000 TJ = 150C
100
10 2 7 12 17 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation vs. Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTGD3148N
VGS GATE-TO-SOURCE VOLTAGE (V) , 400 350 C, CAPACITANCE (pF) 300 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Coss Crss VGS = 0 V Ciss TJ = 25C 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 QG, TOTAL GATE CHARGE (nC) ID = 3.5 A TJ = 25C Q1 Q2 QT
Figure 7. Capacitance Variation
100 VDD = 10 V ID = 3.5 A VGS = 4.5 V t, TIME (ns) 3 IS, SOURCE CURRENT (A) td(off) 2.5 2 1.5 1 0.5 0 10 RG, GATE RESISTANCE (W) 100 0
Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C
tr 10 td(on)
1 1
tf
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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NTGD3148N
PACKAGE DIMENSIONS
TSOP-6 CASE 318G-02 ISSUE S
D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 -
6
5 1 2
4
HE
E
3
b e q 0.05 (0.002) A1 A L c
DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0
MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0
MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10
STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1
SOLDERING FOOTPRINT*
2.4 0.094
1.9 0.075
0.95 0.037 0.95 0.037
0.7 0.028 1.0 0.039
SCALE 10:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTGD3148N/D

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